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What causes a reverse saturation current in a p-n junction diode? The reverse saturation current in a p-n junction diode is caused by the diffusive movement of minority carriers in both p-side and n-side. It increases at a junction with the rise of recombination rate (minority. . The most commonly known solar cell is configured as a large-area p–n junction made from silicon. As a simplification, one can imagine bringing a layer of n-type silicon into direct contact with a layer of p-type silicon. backfeed) is one of the quiet failure modes in PV arrays. It can overheat conductors, stress bypass diodes, damage modules, and in worst cases. . The magic happens when you bring some n-type material next to some p-type material, and create what's called a p-n junction. More specifically, holes flow from the p-type to n-type region, and some of these holes neutralize excess charges in the depletion layer. The diffusion mechanism, and the drift mechanism.
